Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement. VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT. NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by NASA’s Technical End User Team. We are currently only requesting Capability Statements.
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